N-channel Enhancement Mode Power MOSFET

Features VDS= 100V, ID= 40 A RDS(ON)

文件：688.09 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel MOSFET uses advanced SGT technology

Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=36A,RDS(ON)

文件：988.27 Kbytes 页数：4 Pages

DOINGTER

杜因特

丝印：D4126；Package：TO-252；N-Channel MOSFET

Application « Reverse Battery protection » Load switch Power management PWM Application

文件：3.20818 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

100V N-Channel MOSFET

General Description The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purp

文件：462.64 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 43A@ TC=25℃ • Drain Source Voltage- : VDSS=100V(Min) • Static Drain-Source On-Resistance : RDS(on) =24mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：309.23 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 60A@ TC=25℃ • Drain Source Voltage- : VDSS=25V(Min) • Static Drain-Source On-Resistance : RDS(on) =4.0mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：309.68 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used in PWM, load switching and general purpose ap

文件：118.82 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specificatio

文件：115.94 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：179.34 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：179.34 Kbytes 页数：6 Pages

AOSMD

万国半导体