N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used in PWM, load switching and general purpose ap

文件：118.82 Kbytes 页数：5 Pages

AOSMD

万国半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 60A@ TC=25℃ • Drain Source Voltage- : VDSS=25V(Min) • Static Drain-Source On-Resistance : RDS(on) =4.0mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：309.68 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

文件：149.85 Kbytes 页数：6 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

文件：149.85 Kbytes 页数：6 Pages

AOSMD

万国半导体