N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 2

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AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 speci

AOS

美国万代

Accessories Hardware

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ETCList of Unclassifed Manufacturers

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Accessories Hardware

[NKK Switches] Hardware Threading Many hardware pieces are available in both metric and inch threading, and in such cases M (metric) and H (inch) are noted in the descriptions. The customer must select threading by placing an M or H after the basic AT part number. If the hardware is available

文件：3.43102 Mbytes 页数：34 Pages

ETCList of Unclassifed Manufacturers

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COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD43

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STMICROELECTRONICS

意法半导体