N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD436 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifica

文件：117.13 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：318.59 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AOD436 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifications). VDS(V) = 30V\nID= 60A (VGS= 10V)\nRDS(ON) < 7.5mΩ(VGS= 10V)\nRDS(ON)< 13mΩ(VGS= 4.5V);

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD436 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifica

文件：117.13 Kbytes 页数：5 Pages

AOSMD

万国半导体