N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD446 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD446 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

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AOSMD

万国半导体

P-Channel 30 V (D-S) MOSFET

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VBSEMI

微碧半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -80A@ TC=25℃ ·Drain Source Voltage : VDSS= -30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE

The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. • Specified 250 Volt, 40.68 MHz Characteristics: Output Power = 140 Watts. Gain = 15d

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ADPOW