丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=25A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) = 23mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：308.21 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.0152 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=30A,RDS(ON)

文件：1.97321 Mbytes 页数：5 Pages

DOINGTER

杜因特

丝印：D480；Package：TO-252；N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD480 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

文件：119.38 Kbytes 页数：5 Pages

AOSMD

万国半导体

丝印：D480；Package：TO-252；30V N-Channel MOSFET

文件：267.74 Kbytes 页数：6 Pages

AOSMD

万国半导体

低压MOSFET (12V - 30V)

30V N-Channel MOSFET

AOS

美国万代

30V N-Channel MOSFET

文件：267.74 Kbytes 页数：6 Pages

AOSMD

万国半导体