N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD460 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD460 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

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AOSMD

万国半导体

N-Channel 30-V (D-S) MOSFET

文件：959.9 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. AOT460and AOT460L are electrically identical. -RoHS Compliant -Halogen Free Features

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AOSMD

万国半导体