Complementary Enhancement Mode Field Effect Transistor

文件：219.35 Kbytes 页数：9 Pages

AOSMD

万国半导体

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 6.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package ha

文件：45.08 Kbytes 页数：2 Pages

PANJIT

強茂

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes)

SUPER FAST RECOVERY RECTIFIER VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters

文件：40.62 Kbytes 页数：2 Pages

PANJIT

強茂

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to µPA602T • Automatic mounting

文件：63.58 Kbytes 页数：6 Pages

NEC

瑞萨