Complementary Enhancement Mode Field Effect Transistor

General Description The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD606 is Pbfree (meets ROHS & Sony 259 specifications). AOD606L is a

文件：211.23 Kbytes 页数：9 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other PWM applications. Standard Product AOP606 is Pb-free (meets ROHS & Sony 259 specifications). AOP606L is a Green

文件：221.47 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other PWM applications. Standard Product AOP606 is Pb-free (meets ROHS & Sony 259 specifications). AOP606L is a Green

文件：221.47 Kbytes 页数：7 Pages

AOSMD

万国半导体

Fixed Attenuators (N,BNC,TNC)

文件：85.41 Kbytes 页数：3 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社