Complementary Enhancement Mode Field Effect Transistor

General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a

文件：137.17 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

文件：215.37 Kbytes 页数：9 Pages

AOSMD

万国半导体

MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

MOSFET

MTW

美台微

场效应管

HXY MOSFET

华轩阳电子

30V Complementary MOSFET

General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • Excellent Thermal Performance • RoHS and Halogen-Free Compliant Applications • Pch+Nch Complementary MOSFET for DC-FAN Product Summary Q1 Q2 VDS

文件：562.16 Kbytes 页数：11 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a

文件：137.17 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

文件：215.37 Kbytes 页数：9 Pages

AOSMD

万国半导体