30V Complementary MOSFET

General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • Excellent Thermal Performance • RoHS and Halogen-Free Compliant Applications • Pch+Nch Complementary MOSFET for DC-FAN Product Summary Q1 Q2 VDS

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AOSMD

万国半导体

互补型功率MOSFETs

30V Dual Complementary MOSFET

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a

文件：137.17 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pb-free (meets ROHS & Sony 259 specifications). AOP607L is a

文件：207.61 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pb-free (meets ROHS & Sony 259 specifications). AOP607L is a

文件：207.61 Kbytes 页数：7 Pages

AOSMD

万国半导体