Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4F800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. Standard Product AOF800 is Pb-free (meets ROHS & Sony 259 sp

文件：141.27 Kbytes 页数：7 Pages

AOSMD

万国半导体

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AOP800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP800 is Pb-free (meets ROHS & Sony 259 specifications). AOP800L is a Green Product order

文件：114.08 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AOP800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP800 is Pb-free (meets ROHS & Sony 259 specifications). AOP800L is a Green Product order

文件：114.08 Kbytes 页数：4 Pages

AOSMD

万国半导体

Time-Lag Fuse

文件：219.11 Kbytes 页数：1 Pages

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