N-Channel Enhancement Mode Field Effect Transistor

General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS

文件：163.11 Kbytes 页数：7 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：329.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：995.07 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

30V N-Channel AlphaMOS

General Description\n• Latest Trench Power MOSFET technology\n• Very Low RDS(on) at 4.5VGS\n• Low Gate Charge\n• High Current Capability\n• RoHS and Halogen-Free CompliantApplication\n• DC/DC Converters in Computing\n• Isolated DC/DC Converters in Telecom and Industrial Product Summary\nVDS         

AOS

美国万代