P-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AOL1401 is Pb-free (meets ROHS & S

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AOSMD

万国半导体

Li Charger Protection IC

文件：624.04 Kbytes 页数：14 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode MOSFET

 Features • -20V/-0.65A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=550mΩ(typ.) @ VGS=-2.5V •Super High Dense Cell Design •Reliable and Rugged •SC-70 Package •Lead Free Available (RoHS Compliant)

文件：112.94 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

 Features • -20V/-0.65A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=550mΩ(typ.) @ VGS=-2.5V •Super High Dense Cell Design •Reliable and Rugged •SC-70 Package •Lead Free Available (RoHS Compliant)

文件：112.94 Kbytes 页数：10 Pages

ANPEC

茂达电子