Complementary Enhancement Mode Field Effect Transistor

General Description The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD608 is Pb-free (meets ROHS & Sony 259 specifications). Features

文件：217.42 Kbytes 页数：9 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP608 uses advanced trench technology MOSFETs to provide excellen and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a GreenPro

文件：142.67 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP608 uses advanced trench technology MOSFETs to provide excellen and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a GreenPro

文件：142.67 Kbytes 页数：7 Pages

AOSMD

万国半导体

RECTIFIER DIODE

文件：170.07 Kbytes 页数：4 Pages

POSEICO