N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOD464 is Pb-free (meets ROHS

文件：129.139 Kbytes 页数：5 Pages

AOSMD

万国半导体

RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specifie

文件：102.94 Kbytes 页数：4 Pages

ADPOW

RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specifie

文件：102.94 Kbytes 页数：4 Pages

ADPOW

Wedge Base

文件：32.02 Kbytes 页数：1 Pages

VCC