N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOD464 is Pb-free (meets ROHS

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AOSMD

万国半导体

Round Type

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PANASONIC

松下

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 80 W (PEP) Minimum Gain =

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MOTOROLA

摩托罗拉

Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current, IG

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NTE