丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 57A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) = 9mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：309.46 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=55A,RDS(ON)

文件：1.26875 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

文件：202.41 Kbytes 页数：6 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

文件：495.85 Kbytes 页数：6 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

文件：495.85 Kbytes 页数：6 Pages

AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代