N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD472 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

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AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AOD472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD472 is Pb-free (meets ROHS & Sony 259 specifications). AOD472L is VDS(V) = 25V\nID= 50A (VGS= 10V)\nRDS(ON)<6 mΩ(VGS= 10V)\nRDS(ON)<9.5 mΩ(VGS= 4.5V);

AOS

美国万代

N-Channel 30-V (D-S) MOSFET

文件：994.12 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS

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AOSMD

万国半导体