N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications. Standard product AOD450 is Pb-free (meets ROHS & Sony 259 specifications).

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AOSMD

万国半导体

N-Channel MOSFET 200V, 6.0A, 0.650

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：994.89 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

N-Channel 200 V (D-S) MOSFET

文件：963 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电