N-Channel SDMOSTM POWER Transistor

General Description The AOD452A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicatio

文件：289.28 Kbytes 页数：7 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD

文件：121.91 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

文件：959.9 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOI452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOI452 is Pb-free (meets ROHS & Sony 259 specifications). Fea

文件：479.77 Kbytes 页数：5 Pages

AOSMD

万国半导体