丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.650

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：994.89 Kbytes 页数：3 Pages

TECHPUBLIC

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N-Channel 200 V (D-S) MOSFET

文件：963 Kbytes 页数：6 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：330.91 Kbytes 页数：2 Pages

ISC

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Plastic Encapsulated Device

文件：53.19 Kbytes 页数：3 Pages

AOSMD

万国半导体