isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -80A@ TC=25℃ ·Drain Source Voltage : VDSS= -30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

P-Channel 30 V (D-S) MOSFET

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VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE

The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. • Specified 250 Volt, 40.68 MHz Characteristics: Output Power = 140 Watts. Gain = 15d

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ADPOW

N-CHANNEL ENHANCEMENT MODE

The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. • Specified 250 Volt, 40.68 MHz Characteristics: Output Power = 140 Watts. Gain = 15d

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ADPOW

RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. • Specified 250 Volt, 40.68 MHz Characteristics: Output Power = 140 Watts. Gain = 15d

文件：87.31 Kbytes 页数：4 Pages

Microsemi

美高森美