isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件：959.9 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：304.01 Kbytes 页数：2 Pages

ISC

无锡固电

80V N-Channel MOSFET

文件：328.75 Kbytes 页数：7 Pages

AOSMD

万国半导体

80V N-Channel MOSFET

General Description The AOW480 is fabricated with SDMOS™ trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpo

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AOSMD

万国半导体