isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件：959.91 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

High Speed Infrared Emitting Diode

Features 1. High speed response (response frequency : 40MHz) 4. Lead bending type may be used. 2. Peak emission wavelength λp : TYP. 880 mm 3. Half intensity angle ∆θ : ± 22˚ ■ Applications 1. AV equipment 2. Personal computers 3. Portable information terminal equipment ■

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SHARPSharp Corporation

夏普

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

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亚德诺

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

文件：337.17 Kbytes 页数：16 Pages

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亚德诺