P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4191 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. The device well suited for high current applications. -RoHS Compliant -Halogen Free* Features VDS (V) = -40V ID = -34A (VGS = -10V) RDS(ON)

文件：526.32 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

P-Channel 40 V (D-S) MOSFET

文件：976.41 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -55A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.76 Kbytes 页数：2 Pages

ISC

无锡固电

2C 24 AWG 7/32 TC PVC / OAS / PVC COMMUNICATION & CONTROL CABLE

文件：59.78 Kbytes 页数：1 Pages

GENERAL

通用电缆