NPN 22 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI

文件：104.6 Kbytes 页数：12 Pages

PHI

PHI

丝印：P4；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：P4；Package：SOT-343R；NPN 22 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI

文件：104.6 Kbytes 页数：12 Pages

PHI

PHI

NPN 22 GHz wideband transistor

文件：91.52 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 22 GHz wideband transistor

文件：402.59 Kbytes 页数：13 Pages

PHI

PHI

NPN 22 GHz wideband transistor

文件：91.52 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 22 GHz宽频带晶体管

NPN双多晶硅宽带晶体管 射极为热超前\n高功率增益\n高传送频率\n低反馈电容\n低噪声;

恩XP