丝印：P5；Package：SOT-343R；NPN 25 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI

文件：111.81 Kbytes 页数：12 Pages

PHI

PHI

丝印：P5；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in RF wideband amplifiers and oscillators.

文件：292.87 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Transistors

■ Features ● Very high power gain ● Low noise figure ● 25 GHz wideband transistor ● Emitter is thermal lead ● Low feedback capacitance.

文件：1.95056 Mbytes 页数：7 Pages

KEXIN

科信电子

Microwave, low noise, SiGe NPN HBT

Microwave, low noise, SiGe NPN HBT UHF 25 GHZ, low noise transistor with SiGe HBT technique, high power gain, low noise and large dynamic range. The adoption of subminiature SOT-343R package, especially suitable for high density surface patch installation, mainly for the VHF, UHF broadband high

文件：663.79 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

GENERAL PURPOSE TRANSISTOR RF NPN TRANSISTOR MICROWAVE LOW NOISE

DESCRIPTION UHF 25 GHz, low noise transistor with SiGe HBT technique, high power gain, low noise and large dynamic range. The adoption of subminiature SOT-343 package, especially suitable for high density surface patch installation, mainly for the VHF, UHF broadband high frequency low noise ampli

文件：664.91 Kbytes 页数：6 Pages

AITSEMI

创瑞科技

NPN 25 GHz wideband transistor

文件：96.25 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 25 GHz wideband transistor

文件：96.25 Kbytes 页数：12 Pages

JMNIC

锦美电子

NPN 25 GHz wideband transistor

Overview NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Emitter is thermal lead\nHigh power gain\nHigh transition frequency\nLow feedback capacitance\nLow noise;

恩XP

晶体管

SLKOR

萨科微