74AUP1T45GM

Marking：p5；Package：SOT886；Low-power dual supply translating transceiver; 3-state

1.Generaldescription The74AUP1T45isasinglebittransceiverfeaturingtwodatainput-outputs(AandB),adirection controlinput(DIR)anddualsupplypins(VCC(A)andVCC(B))whichenablebidirectionallevel translation.BothVCC(A)andVCC(B)canbesuppliedatanyvoltagebetween1.1V

74AUP1T45GN

Marking：p5；Package：SOT1115；Low-power dual supply translating transceiver; 3-state

1.Generaldescription The74AUP1T45isasinglebittransceiverfeaturingtwodatainput-outputs(AandB),adirection controlinput(DIR)anddualsupplypins(VCC(A)andVCC(B))whichenablebidirectionallevel translation.BothVCC(A)andVCC(B)canbesuppliedatanyvoltagebetween1.1V

74AUP1T45GS

Marking：p5；Package：SOT1202；Low-power dual supply translating transceiver; 3-state

1.Generaldescription The74AUP1T45isasinglebittransceiverfeaturingtwodatainput-outputs(AandB),adirection controlinput(DIR)anddualsupplypins(VCC(A)andVCC(B))whichenablebidirectionallevel translation.BothVCC(A)andVCC(B)canbesuppliedatanyvoltagebetween1.1V

74AUP1T45GW

Marking：p5；Package：SOT363-2；Low-power dual supply translating transceiver; 3-state

1.Generaldescription The74AUP1T45isasinglebittransceiverfeaturingtwodatainput-outputs(AandB),adirection controlinput(DIR)anddualsupplypins(VCC(A)andVCC(B))whichenablebidirectionallevel translation.BothVCC(A)andVCC(B)canbesuppliedatanyvoltagebetween1.1V

ACPDH3-5V0UB-HF

Marking：P5；Package：SOT-523；SMD ESD Protection Diode

Features -DesignedtoreplacepolymerTVS. -Lowoperatingvoltage:5V. -Solid-statesilicon-avalanchetechnology. -ProtectsuptotwoI/Olines. -Transientprotectionforhigh-speeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) -Ultra-

BFG425W

Marking：P5；Package：SOT-343R；NPN 25 GHz wideband transistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI

BFG425W

Marking：P5；Package：SOT-343R；RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BZX84W-C5V6

Marking：P5；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 3.Applications •Gene

BZX84W-C5V6-Q

Marking：P5；Package：SC-70；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 •Qualifiedaccordingto

CPDH3-5V0UB-HF

Marking：P5；Package：SOT-523；SMD ESD Protection Diode

Features -DesignedtoreplacepolymerTVS. -Lowoperatingvoltage:5V. -Solid-statesilicon-avalanchetechnology. -Noinsertionlossto>3.0GHz. -ProtectsuptotwoI/Olines. -Transientprotectionforhigh-speeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC6100