30V N-Channel MOSFET

General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Product Summary V

文件：286.37 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：293.25 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：AOD4184A；Package：TO-252-3L；40V N-Channel MOSFET

Features Vds=60V, ID=53A RDS(ON)12m0@VGS=10V RDS(ON) 17m@VGS-4.5V

文件：1.4766 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

低压MOSFET (12V - 30V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术制造出性能领先的低压MOSFET。这些产品为DCDC、负载开关、BLDC及电源等应用量身定做。

AOS

美国万代

80V N-Channel MOSFET

General Description The AOD4180 is fabricated with SDMOS™ trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purp

文件：268.92 Kbytes 页数：7 Pages

AOSMD

万国半导体

80V N-Channel MOSFET

General Description The AOD4182 is fabricated with SDMOS™ trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purp

文件：268.26 Kbytes 页数：7 Pages

AOSMD

万国半导体

Plastic Encapsulated Device

General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Product Summary VDS 40V ID

文件：107.24 Kbytes 页数：5 Pages

AOSMD

万国半导体

40V N-Channel MOSFET

General Description The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is well suited for high current load applications. Product Summary VDS 40V ID(at VGS=10V) 50A RDS(ON)(at VGS=10V)

文件：237.86 Kbytes 页数：6 Pages

AOSMD

万国半导体

Plastic Encapsulated Device

General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Product Summary VDS 40V ID

文件：107.24 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications. -RoHS Compliant -Halogen Free* Features

文件：154.21 Kbytes 页数：6 Pages

AOSMD

万国半导体