isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=- 40A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：353.34 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 4 0 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

文件：1.07151 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：D4185；Package：TO-252；P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

文件：591.84 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：40P04；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features Vos=-40V ID=- 40A RDS(ON)

文件：3.37531 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：D4185；Package：TO-252；P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

文件：456.87 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications. -RoHS Compliant -Halogen Free* Features

文件：154.21 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

文件：275.54 Kbytes 页数：6 Pages

AOSMD

万国半导体

场效应管MOSFET

MSKSEMI

美森科

场效应管

HXY MOSFET

华轩阳电子

MOSFET

MTW

美台微