丝印：40P04；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features Vos=-40V ID=- 40A RDS(ON)

文件：3.37531 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：D4185；Package：TO-252；P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

文件：591.84 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：D4185；Package：TO-252；P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

文件：456.87 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=- 40A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：353.34 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 4 0 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

文件：1.07151 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：321.07 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for low voltage inverter applications. Features VDS(V) = 40V ID= 50A (VGS= 10V) RDS(ON)

文件：153.43 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications Features VDS (V) = -40V ID = -45A (VGS = -1

文件：146.33 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -45A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：298.88 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D4189；Package：TO-252；P-Channel MOSFET

Features ● VDS (V) =-40V ● ID = -40A ● RDS(ON)

文件：495.86 Kbytes 页数：7 Pages

EVVOSEMI

翊欧