| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：40P04；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET Features Vos=-40VID=-40A RDS(ON) | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
isc P-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=-40A@TC=25℃ ·DrainSourceVoltage- :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Marking：D4185；Package：TO-252；P-Channel MOSFET Features ●VDS(V)=-40V ●ID=-40A ●RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
Marking：D4185；Package：TO-252；P-Channel MOSFET Features ●VDS(V)=-40V ●ID=-40A ●RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOD4186combinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforlowvoltageinverterapplications. Features VDS(V)=40V ID=50A(VGS=10V) RDS(ON) | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
Marking：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor •FEATURES •WithTo-252(DPAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOD4187usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications Features VDS(V)=-40V ID=-45A(VGS=-1 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
isc P-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=-45A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOD4189usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications. Features VDS(V)=-40V ID=-40A(VGS=- | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-Channel 4 0 V (D-S) MOSFET FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
详细参数
- 型号：
AOD418
- 功能描述：
MOSFET N-CH 30V 13.5A TO252
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
-
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS/万代 |
25+ |
TO-252 |
32196 |
AOS/万代全新特价AOD418即刻询购立享优惠#长期有货 |
询价 | ||
AOS/万代 |
2019+ |
TO252 |
3333 |
原厂渠道 可含税出货 |
询价 | ||
AOS/万代 |
24+ |
TO-252 |
333888 |
原装进口 AOS原厂代理商 |
询价 | ||
AOS/万代 |
24+ |
TO252 |
498462 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
ALPHA |
2016+ |
TO252 |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
ALPHA |
2016+ |
TO252 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
AO原装 |
21+ |
TO-252 |
12588 |
原装正品 |
询价 | ||
AOS/万代 |
23+ |
TO-252 |
24190 |
原装正品代理渠道价格优势 |
询价 | ||
AOS/万国 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
AOS |
1809+ |
TO-252 |
6675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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