N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

文件：36.05 Kbytes 页数：6 Pages

PHI

飞利浦

LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

Low-Noise N-Channel Junction Field-Effect Transistor for RF Applications BF 410 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect transistors in plastic package similar to TO92 (10 A 3 DIN 41888). They are designed for use up to the VHF range.

文件：54.98 Kbytes 页数：3 Pages

SIEMENS

西门子

NPN 22 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI

文件：104.6 Kbytes 页数：12 Pages

PHI

飞利浦

NPN 22 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI

文件：104.6 Kbytes 页数：12 Pages

PHI

飞利浦