N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOD4110 is

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AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

4.1 x 1.0mm RIGHT ANGLE SMD CHIP LED LAMP

文件：162.16 Kbytes 页数：5 Pages

KINGBRIGHT

今台电子

4.1 x 1.0mm RIGHT ANGLE SMD CHIP LED LAMP

文件：151.3 Kbytes 页数：5 Pages

KINGBRIGHT

今台电子

4.1 x 1.0mm RIGHT ANGLE SMD CHIP LED LAMP

文件：152.76 Kbytes 页数：5 Pages

KINGBRIGHT

今台电子