P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets

文件：120.7 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-12 A (VGS =-10V) ● RDS(ON)

文件：1.41166 Mbytes 页数：5 Pages

KEXIN

科信电子

isc P-Channel MOSFET Transistor

文件：347.96 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET

WXDH

东海半导体

MOSFET

MTW

美台微

P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

60V N-Channel MOSFET

General Description The AOD4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. General Fe

文件：845.73 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

N-Channel 6 0-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

文件：897.82 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

60V N-Channel MOSFET

General Features VDS 60V ID (at VGS=10V) 30A RDS(ON) (at VGS=10V)

文件：455.57 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power manageme

文件：268.5 Kbytes 页数：2 Pages

ISC

无锡固电