30V N-Channel MOSFET

General Description The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent R DS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general pur

文件：363.94 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 55A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) =5.6mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

文件：310.35 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

N-Channel 30-V (D-S) MOSFET

文件：994.13 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：318.56 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel MOSFET

General Description The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent R DS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general pur

文件：363.94 Kbytes 页数：7 Pages

AOSMD

万国半导体