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BD410

NPNEPITAXIALSILICONPOWERTRANSISTOR

NPNEPITAXIALSILICONPOWERTRANSISTOR TO-126 PlasticPackage

CDIL

CDIL

BF410

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENS

Siemens Ltd

BF410A

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENS

Siemens Ltd

BF410A

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BF410B

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BF410B

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENS

Siemens Ltd

BF410C

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BF410C

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENS

Siemens Ltd

BF410D

N-channelsiliconfield-effecttransistors

DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BF410D

LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS

Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.

SIEMENS

Siemens Ltd

BFG410

NPN22GHzwidebandtransistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG410W

NPN22GHzwidebandtransistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG410W

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFP410

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BFP410

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor •Lowcurrentdevicesuitablee.g.forhandhelds •Forhighfrequencyoscillatorse.g.DROforLNB •ForISMbandapplicationslike AutomaticMeterReading,Sensorsetc. •TransitfrequencyfT=25GHz •Pb-free(RoHScompliant)andhalogen-freepa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BPF-A410

BandpassFilter

MINIMini-Circuits

微型电路

BRUS410

ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

edi

BTM410

modulesfromLairdaredesignedtomeettheneedsofdeveloperswhowishtoaddrobust

LSTD

Laird Tech Smart Technology

BTS410E

High-sideswitch

PROFET® *High-sideswitch *Short-circuitprotection *Overtemperatureprotection *Overloadprotection *Loaddumpprotection?) *Undervoltageandovervollaflesshutdownwithauto-restartandhysteresis *Reversebatteryprotection *Inputandstatusprotection *Clampofnegativeoutput

SIEMENS

Siemens Ltd

BUF410

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighVoltage ·HighSpeedSwitching APPLICATIONS ·Designedforuseinhigh-frequencypowersuppliesandmotorcontrolapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    AOD410L

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
23+
N/A
36400
正品授权货源可靠
询价
VB
2019
SOT-252
55000
绝对原装正品假一罚十!
询价
AO
14+
TO-252
54500
百分百原装正品现货
询价
APLHA
21+
TO-252
30000
只做正品原装现货
询价
AO
20+/21+
TO-252
9500
全新原装进口价格优势
询价
E
21+
SOT-252
10001
询价
E
23+
SOT-252
10000
公司只做原装正品
询价
AO
23+
TO-252
4500
全新原装、诚信经营、公司现货销售!
询价
VB
SOT-252
68900
原包原标签100%进口原装常备现货!
询价
VB
SOT-252
10000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多AOD410L供应商 更新时间2024-5-21 11:36:00