丝印：45N65M5；Package：TO-3PF；N-channel 650 V, 35 A, 0.067 廓 typ., MDmesh??V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.27445 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：45N65M5；Package：PowerFLAT；N-channel 650 V, 0.075 廓 typ., 22.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??8x8 HV package

Description This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring hig

文件：878.47 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：45N65M5；Package：TO-247；N-channel 650 V, 35 A, 0.067 廓 typ., MDmesh??V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.27445 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：45N65M5；Package：TO-247；N-channel 650 V, 35 A, 0.067 廓 typ., MDmesh??V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.27445 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体