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型号	下载订购	功能描述	制造商上传企业	LOGO
STB30N65M5	文件：1.28182 Mbytes Page：22 Pages	丝印：30N65M5；Package：D2PAK；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247 Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a 文件：1.28182 Mbytes 页数：22 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STF30N65M5	文件：1.28182 Mbytes Page：22 Pages	丝印：30N65M5；Package：TO-220FP；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247 Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a 文件：1.28182 Mbytes 页数：22 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STI30N65M5	文件：1.28182 Mbytes Page：22 Pages	丝印：30N65M5；Package：I2PAK；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247 Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a 文件：1.28182 Mbytes 页数：22 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP30N65M5	文件：1.28182 Mbytes Page：22 Pages	丝印：30N65M5；Package：TO-220；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247 Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a 文件：1.28182 Mbytes 页数：22 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STW30N65M5	文件：1.28182 Mbytes Page：22 Pages	丝印：30N65M5；Package：TO-247；N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247 Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a 文件：1.28182 Mbytes 页数：22 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
30N65M5
功能描述：
MOSFET POWER MOSFET N-CH 650V 22 A
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华高宇电子有限公司	STW30N65M5	STM	21+		1800	TO-247-3	询价
深圳和润天下电子科技有限公司	STW30N65M5	ST/意法半导体	22+	TO-247-3	6002	原装正品现货可开增值税发票	询价
深圳市高捷芯城科技有限公司	STW30N65M5	ST(意法半导体)	24+	TO-247	7814	支持大陆交货,美金交易。原装现货库存。	询价
柒号芯城电子商务(深圳)有限公司	STW30N65M5	ST	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市得捷芯城科技有限公司	STW30N65M5	ST(意法)	24+	TO-247-3	9548	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市达恩科技有限公司	STW30N65M5	STMicroelectronics	24+	NA	3000	进口原装正品优势供应	询价
深圳市威尔健半导体有限公司	STW30N65M5	AO/万代	23+	TO-220	69820	终端可以免费供样,支持BOM配单!	询价
艾睿（深圳）半导体有限公司	STW30N65M5	ST	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	STW30N65M5	STM	25+	TO247-3	326	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	STW30N65M5		22+	NA	396	加我QQ或微信咨询更多详细信息,	询价

更多30N65M5供应商更新时间2025-12-25 14:10:00

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