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STB30N65M5中文资料意法半导体数据手册PDF规格书
STB30N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
■ Worldwide best RDS(on)*area
■ Higher VDSS rating
■ Excellent switching performance
■ Easy to drive
■ 100 avalanche tested
■ High dv/dt capability
Applications
■ Switching applications
产品属性
- 型号：
STB30N65M5
- 功能描述：
MOSFET POWER MOSFET N-CH 650V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
32050 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
11+ |
TO263 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
24+ |
TO-263-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/ |
22+23+ |
TO263 |
8000 |
新到现货，只做原装进口 |
询价 | ||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
ST/意法 |
23+ |
NA |
25630 |
原装正品 |
询价 |
