STB3020L中文资料意法半导体数据手册PDF规格书

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.019 Ω

■ LOW GATE CHARGE A 100°C

■ APPLICATION ORIENTED CHARACTERIZATION

■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

■ ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-AC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs

■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)