N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：85.57 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET

ST

意法半导体

N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：83.36 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

文件：83.36 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

GSM Multiband RF Transceiver

Description The W3020 is a highly integrated GSM transceiver designed to operate in dual-band handsets or in single-band handsets operating at 900, 1800, and 1900 MHz frequency bands (1900 MHz performance is not verified in production). The IC architecture allows the RF designer to provide soluti

文件：409.26 Kbytes 页数：44 Pages

AGERE