isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

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STMICROELECTRONICS

意法半导体

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.3 - 200 Volts PD : 1.5 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

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EIC

Rectifier Diode

FEATURES ■ High Surge Capability APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers

文件：91.31 Kbytes 页数：7 Pages

DYNEX

GSM Multiband RF Transceiver

Description The W3020 is a highly integrated GSM transceiver designed to operate in dual-band handsets or in single-band handsets operating at 900, 1800, and 1900 MHz frequency bands (1900 MHz performance is not verified in production). The IC architecture allows the RF designer to provide soluti

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AGERE