isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) =0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.66 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re

文件：105.43 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET

文件：47.69 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma

文件：47.12 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：86.01 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体