isc N-Channel MOSFET Transistor

• FEATURES • With TO-220 packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages • LCD & PDP TV • Power supply • Switchi

文件：318.95 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.075Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：370.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 200V - 0.065廓 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. Features ■ Gate charge min

文件：390.37 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET

文件：392.22 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 200 V (D-S) MOSFET

文件：940.14 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N沟道200 V、0.065 Ohm、30 A TO-220 STripFET(TM) 功率MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. • Gate charge minimized \n• Excellent figure of merit (RDS*Qg) \n• 100% avalanche tested \n• Very low intrinsic capacitances \n• Very good manufactuing repeability;

ST

意法半导体