N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：86.01 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.025 ohm - 30A TO-252

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：286.34 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.025 ohm - 30A TO-252

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：286.34 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

文件：989.69 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

文件：989.69 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

文件：989.69 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET

ST

意法半导体