STD3NB50资料使用说明书市场行情意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STD3NB50	文件：75.21 Kbytes Page：6 Pages	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex 文件：75.21 Kbytes 页数：6 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STD3NB50	文件：300 bytes Page：1 Pages	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET	ST 意法半导体	ST
STD3NB50T4	文件：1.07827 Mbytes Page：9 Pages	Power MOSFET 文件：1.07827 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
D3NB50	文件：75.21 Kbytes Page：6 Pages	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex 文件：75.21 Kbytes 页数：6 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多STD3NB50供应商更新时间2026-4-17 16:31:00