N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

文件：460.69 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh™II MOSFET

ST

意法半导体

N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

文件：460.69 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S)Power MOSFET

文件：1.90688 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件：1.07825 Mbytes 页数：9 Pages

VBSEMI

微碧半导体