N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：448.37 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET™ II POWER MOSFET

ST

意法半导体

N-CHANNEL 60V - 0.020 ohm - 40A DPAK Zener-Protected STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：296.69 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) -RDS(on) = 28mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60V - 0.024廓 - 23A - TO-220FP STripFET??II Power MOSFET

文件：259.44 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 60V - 0.024ohm - 23A - TO-220FP STripFET II MOSFET

Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable

文件：253 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体