Gate charge minimized

文件：990.86 Kbytes 页数：16 Pages

STMICROELECTRONICS

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Power MOSFET

文件：1.07824 Mbytes 页数：9 Pages

VBSEMI

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N-channel 400 V, 2.7 Ohm typ., 2 A SuperMESH K3 Power MOSFET in a DPAK package

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable fo • 100% avalanche tested\n• Extremely high dv/dt capability\n• Gate charge minimized• Very low intrinsic capacitance\n• Improved diode reverse recovery characteristics\n• Zener-protected;

ST

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N-channel 400 V, 3 廓, 1.8 A SOT-223 SuperMESH3 Power MOSFET

文件：847.53 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体