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STD30NF06

N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD30NF06

60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

UMWUMW

友台友台半导体

STD30NF06L

N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD30NF06L

60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheSTD30NF06usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

UMWUMW

友台友台半导体

STD30NF06LAG

Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET™ II Power MOSFET in a DPAK package

Features AEC-Q101qualified Lowthresholddrive Gatechargeminimized Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET™process isspecificallydesignedtominimizeinput capacitanceandgatecharge.Itisthereforeideal asaprimaryswitchin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD30NF06LT4

N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET??POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD30NF06-1

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STD30NF06L-1

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STD30NF06LT4

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STD30NF06LAG

包装:卷带(TR) 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:MOSFET N-CH 60V 28A DPAK

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

D30NF06L

N-CHANNEL60V-0.022ohm-35ADPAK/IPAKSTripFET??POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STD30NF06

  • 功能描述:

    MOSFET N-Ch 60 Volt 28 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST/意法
22+
TO-252
20000
只做原装进口 免费送样!!
询价
ST
07+/08+
TO-252
7500
询价
ST
23+
TO-252
8795
询价
ST
2017+
TO-252
26589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ST
16+
08+
2
原装现货假一罚十
询价
SR
23+
TO-252
5000
原装正品,假一罚十
询价
ST
23+
TO-252
8650
受权代理!全新原装现货特价热卖!
询价
ST
18+
TO252
999999
进口全新原装现货
询价
ST
17+
TO-252
60000
保证进口原装可开17%增值税发票
询价
ST
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
更多STD30NF06供应商 更新时间2024-5-1 16:36:00